kw.\*:("Transistor bipolaire")
Results 1 to 25 of 4387
Selection :
Quantitative depth profiling resonance ionization mass spectrometry of GaAs/AlGaAs heterojunction bipolar transistorsDOWNEY, S. W; EMERSON, A. B; KOPF, R. F et al.Journal of vacuum science and technology. B. Microelectronics processing and phenomena. 1992, Vol 10, Num 1, pp 385-387, issn 0734-211XConference Paper
The design and electrical characteristics of high-performance single-poly ion-implanted bipolar transistorsDUAN-LEE TANG, D; TZE-CHIANG CHEN; CHUANG, C. T et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1703-1710, issn 0018-9383, 8 p., 1Article
Modelling of a new high current gain bipolar transistor with n-doped hydrogenated silicon emitterBONNAUD, O; VIKTOROVITCH, P.IEE proceedings. Part I. Solid-state and electron devices. 1985, Vol 132, Num 1, pp 17-22, issn 0143-7100Article
Frequency response of bipolar junction transistors after electron-beam irradiationJENKINS, K. A.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 9, pp 1722-1724, issn 0018-9383, 3 p., 1Article
High-gain, high-frequency AlGaAs/GaAs graded band-gap base bipolar transistors with a Be diffusion setback layer in the baseMALIK, R. J; CAPASSO, F; STALL, R. A et al.Applied physics letters. 1985, Vol 46, Num 6, pp 600-602, issn 0003-6951Article
Photon emission from avalanche breakdown in the collector junction of GaAs.AlGaAs heterojunction bipolar transistorsCHEN, J; GAO, G. B; HUANG, D et al.Applied physics letters. 1989, Vol 55, Num 4, pp 374-376, issn 0003-6951, 3 p.Article
A pnp AlGaAs/GaAs heterojunction bipolar transistorCHAND, N; HENDERSON, T; FISCHER, R et al.Applied physics letters. 1985, Vol 46, Num 3, pp 302-304, issn 0003-6951Article
An emitter guard-ring structure for GaAs high-gain heterojunction bipolar transistorsZHU, E. J; FISHER, R; HENDERSON, T et al.IEEE electron device letters. 1985, Vol 6, Num 2, pp 91-93, issn 0741-3106Article
A novel isolated, compensated Darlington base-drive configurationENSLIN, J. H. R.European transactions on electrical power engineering. 1995, Vol 5, Num 3, pp 149-156, issn 0939-3072Article
CBC reduction in InP heterojunction bipolar transistor with selectively implanted collector pedestalYINGDA DONG; GRIFFITH, Zach; DAHLSTRÖM, Mattias et al.DRC : Device research conference. 2004, pp 67-68, isbn 0-7803-8284-6, 1Vol, 2 p.Conference Paper
Contribution à la modélisation des transistors haute fréquence = Contribution to the high frequency transistor modelingZimmer, Thomas; Dom, Jean-Paul.1992, 158 p.Thesis
Bitstream trimming of a smart temperature sensorPERTIJS, Michiel A. P; HUIJSING, Johan H.IEEE Sensors conference. 2004, isbn 0-7803-8692-2, 3Vol, vol 2, 904-907Conference Paper
On the suitability of SiGe HBTs for high-temperature (to 300°C) electronicsTIANBING CHEN; KUO, Wei-Min; ENHAI ZHAO et al.Bipolar/BiCMOS Circuits and Technology Meetings. 2004, pp 217-220, isbn 0-7803-8618-3, 1Vol, 4 p.Conference Paper
Planarized InP/InGaAs heterojunction bipolar transistors with fmax > 500 GHzSAWDAI, D; CHANG, P. C; GAMBIN, V et al.DRC : Device research conference. 2004, pp a14-a15, isbn 0-7803-8284-6, 1VolConference Paper
The bipolar spin transistorJOHNSON, M.Journal of magnetism and magnetic materials. 1995, Vol 140-44, Num 1, pp 21-24, issn 0304-8853Conference Paper
Characterization of non-ohmic behavior of emitter contacts of bipolar transistorsRICCO, B; STORK, J. M. C; ARIENZO, M et al.IEEE electron device letters. 1984, Vol 5, Num 7, pp 221-223, issn 0741-3106Article
CARACTERISATION DES DEGRADATIONS DES IGBTS EN MILIEU INDUSTRIEL = CHARACTERIZATION OF IGBT DEGRADATIONS IN INDUSTRIAL ENVIRONMENTMaouad, Alain; Charles, Jean-Pierre.1999, 160 p.Thesis
SiGe HBTs with cut-off frequency of 350GHzRIEH, J.-S; JAGANNATHAN, B; KHATER, M et al.IEDm : international electron devices meeting. 2002, pp 771-774, isbn 0-7803-7462-2, 4 p.Conference Paper
Contribution à l'étude de la réalisation du transistor bipolaire à hétérojonction GaAlAs/GaAs à structure autoalignée en technologie double mesa = Optimization of a self-aligned double mesa technology for AlGaAs/GaAs heterojonction bipolar transistorsBimuala, Bamueni; L'Hoir, Alain.1991, 217 p.Thesis
Losses in PWM inverters using IGBTs. ReplyKOLAR, J. W; CASANELLAS, F; ZACH, F. C et al.IEE proceedings. Electric power applications. 1995, Vol 142, Num 4, pp 285-288, issn 1350-2352Article
Simulation of the dynamic behaviour of bipolar power transistors with PSPICELU, Y.Archiv für Elektrotechnik (Berlin). 1992, Vol 75, Num 4, pp 303-309, issn 0003-9039Article
BILOW: simulation of low-temperature bipolar device behaviorCHRZANOWSKA-JESKE, M; JAEGER, R. C.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1475-1488, issn 0018-9383, 14 p.Article
Base profile design for high-performance operation of bipolar transistors at liquid-nitrogen temperatureSTORK, J. M. C; HARAME, D. L; MEYERSON, B. S et al.I.E.E.E. transactions on electron devices. 1989, Vol 36, Num 8, pp 1503-1509, issn 0018-9383, 7 p.Article
The SIT saturation protected bipolar transistorWILAMOWSKI, B. M; MATTSON, R. H; STASZAK, Z. J et al.IEEE electron device letters. 1984, Vol 5, Num 7, pp 263-265, issn 0741-3106Article
BCTM proceedings 2004 (proceedings of the 2004 Bipolar/BiCMOS Circuits and Technology Meetings)Bipolar/BiCMOS Circuits and Technology Meetings. 2004, isbn 0-7803-8618-3, 1Vol, 322 p., isbn 0-7803-8618-3Conference Proceedings